[PDF.07hz] SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices

SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices

[PDF.xu28] SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices

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 | #5122874 in Books |  CRC Press |  2007-12-13 | Original language:English | PDF # 1 |  .65 x7.35 x10.10l,1.34 | File type: PDF | 264 pages

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||About the Author|Georgia Institute of Technology, Atlanta, USA

What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-v...

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