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| #9102176 in Books | Cambridge University Press | 2009-11-19 | Original language:English | PDF # 1 | 8.98 x.51 x5.98l,.85 | File type: PDF | 194 pages | |
To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate. Presentations collected here focus on understanding, from a chemistry and materials perspective, the mechanism of interface formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address reliability concerns for high-k/metal gate (basic physical models, c...
You can specify the type of files you want, for your device.CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications: Volume 1155 (MRS Proceedings) | From Brand: Cambridge University Press. Which are the reasons I like to read books. Great story by a great author.
