[PDF.56at] Analysis and Simulation of Heterostructure Devices (Computational Microelectronics)

Analysis and Simulation of Heterostructure Devices (Computational Microelectronics)

[PDF.mq66] Analysis and Simulation of Heterostructure Devices (Computational Microelectronics)

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 | #13412192 in Books |  2004-02-17 | Original language:English | PDF # 1 |  6.14 x.75 x9.21l,1.39 | File type: PDF | 289 pages

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The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparis...

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