[PDF.65rq] AlGaN/GaN-based millimeter-wave high electron mobility transistors (Science for Systems)

AlGaN/GaN-based millimeter-wave high electron mobility transistors (Science for Systems)

[PDF.ng08] AlGaN/GaN-based millimeter-wave high electron mobility transistors (Science for Systems)

AlGaN/GaN-based millimeter-wave high electron  Christian Haupt epub
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AlGaN/GaN-based millimeter-wave high electron  Christian Haupt summary

 | #14463894 in Books |  2011-11-01 | Original language:English |  8.31 x.59 x5.75l, | File type: PDF | 197 pages

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In this work a scaling approach is studied to develop a transistor technology which achieves a high gain as well as a high output power at W-band frequencies and can be applied in the existing fabrication process for MMICs. Following the theoretical scaling rules for field effect transistors lateral and vertical critical dimensions of 100 nm and 10 nm must be achieved, respectively. Therefore various new fabrication processes were developed to enable the new critical dim...

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